Method of manufacturing a semiconductor device using a spacer
US5620912A · kind A · utility
46Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1995 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Jun 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor device and manufacturing method wherein a gate insulating film is formed on a semiconductor substrate. A gate is formed on the gate insulating film and a sidewall spacer is formed on respective sides of the gate. The substrate is etched at the respective sides of the gate to form respective recessed parts of the substrate. An insulating film is provided on the recessed parts of the substrate and the recessed parts are filled with a semiconductor layer. Impurity regions are formed contacting the semiconductor layer in the semiconductor substrate on the respective sides of the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.