Semiconductor laser and method of manufacturing same
US5621746A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1993 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Oct 14, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser such as a laser diode includes a semiconductor substrate and a laser diode region disposed on said semiconductor substrate and having a laser beam emission end. The semiconductor substrate has a front surface directly below said laser beam emission end, said front surface being retracted from said laser beam emission end. The front surface may be formed as an optically roughened surface as a side wall surface of a groove when the groove is defined in the semiconductor substrate by dicing. The laser diode region includes an active layer of GaAs or AlGaAs. The front surface may further be optically roughened by etching or sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.