Method of manufacturing a semiconductor device
US5622888A · kind A · utility
49Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1995 |
| Grant date | Apr 22, 1997 |
| Priority date | — |
| Expiry date | Oct 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
Abstract
A semiconductor device has a capacitive element with excellent leak current characteristics which has a tungsten film with a roughened surface for increasing the surface of a lower electrode. A capacitive element for use in a VLSI memory circuit such as a DRAM or the like is fabricated by forming a thin, roughened tungsten film selectively on a surface of a lower electrode of polysilicon by chemical vapor-phase growth and forming a capacitive insulating film on the surface of the lower electrode of polysilicon, densifying the capacitive insulating film, and forming an upper electrode of a metal element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.