Method of manufacturing a thin silicon-oxide layer
US5622896A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1995 |
| Grant date | Apr 22, 1997 |
| Priority date | — |
| Expiry date | Oct 16, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49121
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of providing an ultra-thin (<1 nm) silicon-oxide layer on a substrate surface, for example, of a metal. A film of a solution of a polyorganosiloxane is applied to the substrate surface. After drying, the polyorganosiloxane is completely converted to said silicon-oxide layer by means of an UV-ozone treatment. Such an ultra-thin silicon-oxide layer sufficiently protects a metal surface against corrosion. In addition, the silicon-oxide layer can be silanized with the customary silane coupling agents to improve the bond with polymers. The method can very suitably be used, for example, to treat metal leadframes for ICs and to provide a bonding layer for indium tin oxide on polyacrylate for a passive plate of LC displays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.