MOSFET on SOI substrate

US5623155A · kind A · utility

Assignee

• Seimens Aktiengesellschaft · DE

Inventors

• Martin Kerber · Munich, DE
• Reinhard Mahnkopf · Oberhaching, DE

Key dates

• Filing date: Nov 15, 1995
• Grant date: Apr 22, 1997
• Expiry date: Nov 15, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/259

Abstract

A MOSFET is provided in the body silicon layer of an SOI substrate, for example as a mesa. A source region, a channel region, and a drain region are present. A gate electrode having a portion as a ridge on this channel region is also provided. For electrical connection of the channel region, a highly doped, preferably laterally arranged channel terminal region that is electrically conductively connected to the channel region and that has a contact applied thereon.