Dry etching method for compound semiconductors
US5624529A · kind A · utility
20Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1995 |
| Grant date | Apr 29, 1997 |
| Priority date | — |
| Expiry date | May 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.