Enhanced crystallization of amorphous films
US5624873A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1995 |
| Grant date | Apr 29, 1997 |
| Priority date | — |
| Expiry date | Mar 29, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication process for rendering, for example, amorphous silicon (a-Si) films into polycrystalline silicon (poly-Si) films initially commences with the deposition of the a-Si film on a substrate such as glass. The a-Si film is then exposed to a particle flux (e.g. a plasma or a neutral beam). The resulting treatment apparently causes an action that enhances a subsequent crystallization process. The treatment occurs at a temperature well below any level which causes a change in the substrate. The particle flux treatment is followed by an anneal step that enables a rapid crystallization. By appropriate masking prior to the treatment, crystallization in non-treated areas is prevented while crystallization in treated areas occurs during the anneal procedure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.