Barrier layer enhancement in metallization scheme for semiconductor device fabrication
US5624874A · kind A · utility
17Cited by
12References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 18, 1995 |
| Grant date | Apr 29, 1997 |
| Priority date | — |
| Expiry date | Oct 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The properties of a diffusion barrier material layer over a semiconductor substrate are enhanced in a simple and time-effective manner by immersing the substrate in an oxidizing liquid. For a titanium-tungsten barrier metal, a dip in nitric acid for 1-60 minutes provides the metal with an oxide layer of the right thickness of 10-20 .ANG..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.