Infrared emitting device and method
US5625635A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1994 |
| Grant date | Apr 29, 1997 |
| Priority date | — |
| Expiry date | Nov 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrar…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.