Semiconductor devices encapsulated with aluminum nitride-filled resins and process for preparing same
US5627107A · kind A · utility
9Cited by
11References
6Claims
0Family size
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Inventor
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | May 6, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08K9/06
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Semiconductor devices are encapsulated in a thermosetting resin filled with aluminum nitride particles. The aluminum nitride particles have an outer layer of Al-O-N, into which is incorporated amorphous Si-O, which renders them hydrolyrically stable. The aluminum nitride particles impart very high thermal conductivity to the cured resin. In addition, the cured resin has a CTE similar to that of the encapsulated semiconductor device, and has excellent dielectric properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.