High-temperature superconducting josephson devices having a barrier layer of a doped, cubic crystalline, conductive oxide material
US5627139A · kind A · utility
22Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Mar 17, 1995 |
| Grant date | May 6, 1997 |
| Priority date | — |
| Expiry date | Mar 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/702
Abstract
A HTSC Josephson device wherein the barrier layer is a cubic, conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.