Semiconductor acceleration sensor with source and drain regions
US5627397A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1995 |
| Grant date | May 6, 1997 |
| Priority date | — |
| Expiry date | Mar 13, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S73/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.