Hall-effect sensor incorporated in a CMOS integrated circuit

US5627398A · kind A · utility

Assignee

• Iskra Stevci--Industrija Merilne in Upravljalne Tehnike Kranj, D.O.O. · SI

Inventors

• Silvo Zlebir · Kamnik, SI
• Andrej Belic · Kranj, SI

Key dates

• Filing date: Feb 2, 1994
• Grant date: May 6, 1997
• Expiry date: Feb 2, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N59/00

Abstract

The Hall-effect sensor HS' of the invention incorporated in a CMOS integrated circuit IC' is formed with a well 2' as the sensor active layer on a substrate 1'. Heavily doped regions 31', . . . , 34', in the well 2' are connected with sensor metal contacts 41', . . . , 44'. The upper plane S' of the substrate 1' is covered by a field oxide layer 5' the thickness thereof being between 0.8 .mu.m. and 1.0 .mu.m. Over the layer 5' in the region 50' surrounding the sensor contacts 41', . . . , 44', a polysilicon layer 6' is provided to block the disturbing influence of ions migrating in the field oxide layer 5'.