Semiconductor laser geometry for broad-angle far-field addressing
US5627852A · kind A · utility
1Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1995 |
| Grant date | May 6, 1997 |
| Priority date | — |
| Expiry date | Aug 16, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4075
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser apparatus for broad-angle far-field addressing is disclosed. The apparatus comprises a laser block with lasing cavities. The lasing cavity mirrors are made by dry-etching of the semiconductor block. The width of a lasing cavity is defined by a p contact pad on the laser block; further lateral confinement of current to the cavity is achieved by proton implantation followed by etching of the proton layer. The apparatus achieves quasi-continuous beam steering with a total steering angle of 80.degree. and with 11 resolvable spots.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.