Transparent conductors comprising zinc-indium-oxide and methods for making films
US5628933A · kind A · utility
10Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1996 |
| Grant date | May 13, 1997 |
| Priority date | — |
| Expiry date | Mar 26, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S420/903
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Applicant has discovered that aliovalently doped zinc-indium-oxide where In is 40-75% of the metal elements can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency in both the visible and infrared. The material can be doped to resistivity of less than 1 milliohm-cm by small quantifies of aliovalent dopants, such as tetravalent atoms. It can be deposited on glass substrates in amorphous and polycrystalline films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.