Exposure mask comprising transparent and translucent phase shift patterns
US5631109A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An exposure mask is formed by providing a mask pattern including a transparent phase shift pattern and a translucent phase shift pattern on a light-transmissive substrate. Each of the transparent phase shift pattern and the translucent phase shift pattern causes a relative phase difference of 180.degree. to exposure light passing through each of the transparent phase shift pattern against exposure light passing through the light-transmissive substrate and the translucent phase shift pattern. The transparent phase shift pattern and the translucent phase shift pattern partly overlap each other. At least one opening portion in the mask pattern has at an adjacent region an overlap region of the transparent phase shift pattern and the translucent phase shift pattern region. A region of the translucent phase shift pattern is provided on the outside of the overlap region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.