Method of forming element isolation region
US5631189A · kind A · utility
11Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1995 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | Jul 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to this method, before a silicon nitride (Si.sub.3 N.sub.4) layer having a thickness of about 200 nm and serving as a field oxidation (selective oxidation) mask is formed, nitrogen-doped amorphous silicon is deposited to form a silicon layer having a thickness of about 50 nm and serving as an underlying layer of the silicon nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.