Monolithic component including a protection diode in parallel with a plurality of pairs of series diodes
US5631493A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 1994 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | Jul 21, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
A monolithic component incorporates a protection diode in parallel with a plurality of pairs of diodes having the same polarity. The monolithic component is formed from an N-type semiconductor substrate and includes P-type first regions that are formed at the upper surface of the substrate; second regions constituted by upper portions of the substrate, whose lateral surfaces are delineated by P-type insulating walls; a P-type third region at the bottom of the second regions; a fourth P.sup.+ -type region formed from the lower surface in the third region; a fifth N+-type region on the lower surface of the substrate; first metallizations connecting each of the first regions to each of the second regions; and a second metallization on at least one portion of the insulating wall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.