Semiconductor component having a passivation layer and method for manufacturing same

US5631496A · kind A · utility

Assignees

• EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbH · DE
• Siemens Aktiengesellschaft · DE

Inventors

• Albert Hammerschmidt · Erlangen, DE
• Gerhard Schmidt · Graz, AT
• Rolf Schulte

Key dates

• Filing date: Sep 29, 1995
• Grant date: May 20, 1997
• Expiry date: Sep 29, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component has a semiconductor body with at least on pn-junction therein, extending to the surface of the semiconductor body, and has a passivation layer composed of boron-doped, amorphous, hydrogenous carbon (A-C:H) which covers at least the portion of the pn-junction extending to the surface, the boron content of the passivation layer being between 0.1 per mil and 4% by weight. The passivation layer is manufactured on the semiconductor body by deposition from a high-frequency, low-pressure plasma which is generated in a mixture of gaseous, organic compounds containing carbon and hydrogen and gaseous, organic boron compounds.