Thin film metallization process for improved metal to substrate adhesion
US5631498A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 1995 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | May 19, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/2063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallization layer is formed on a substrate with improved adhesion thereto by performing the deposition at an elevated temperature which favors the formation of chemical bonds of the metal to the substrate as well as clusters of metal embedded within the substrate and contiguous with the metallization layer. In polymer substrates the chemical bond is made to carbonyl functional groups such as ketones or aldehydes. The adhesion is enhanced by the removal of moisture from the surface of the substrate at the elevated temperatures employed. A high degree of adhesion is also obtained through the deposition of a mixture of metals including chromium and copper which initially has a high chromium to copper ratio which is decreased during the deposition process. Completion of the process is determined by the reaching of a final desired chromium to copper ratio as observed by optical emission spectroscopy. The process can be carried out on a continuous basis by the use of a multi-chamber vacuum sputtering system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.