Infrared receiver wafer level probe testing
US5631571A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1996 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | Apr 3, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/07342
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system for functionally testing opto-electronic devices, such as fiber-optic infrared receiver photodiodes, in the integral wafer or other optical port-exposed status. The testing arrangement uses a portable optical probe for communicating optical signals between the testing apparatus and the tested device in coincidence with electrical energization and functional operation of the electro-optical device by the test apparatus. The optical probe signals may be correlated in time relationship or other manner with the electrical signals applied-to the device-under-test. The invention provides simple conversion between a conventional electrical semiconductor device probe station and an electro-optical device probe station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.