Semiconductor storage device requiring short time for program voltage to rise
US5631867A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 1, 1995 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | Jun 1, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/145
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An external power source voltage Vcc rises until it exceeds the threshold voltage Vth of an NMOS transistor diode-connected between the external power source (voltage Vcc) and an internal boosted power source (voltage Vpp), whereupon the NMOS transistor is turned on, supplying the internal boosted power source with a voltage (Vcc-Vth) until the power source voltage Vcc reaches its final value. And when the internal reset signal ZPOR expires, the internal boosted power source generating circuit is started to operate so that the internal boost source voltage Vpp is boosted to an intended level Vpp. As a result, when the power is turned on, early stabilization of the boosted power source voltage is realized in a semiconductor storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.