Field emission device cathode and method of fabrication
US5632664A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1995 |
| Grant date | May 27, 1997 |
| Priority date | — |
| Expiry date | Sep 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/319
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emission device cathode (10) may be fabricated by forming a dielectric layer (14) on an upper surface of a resistive layer (12). A gate layer (16) is formed on the dielectric layer (14). An opening is formed in the gate layer (16) and a microtip cavity (18) is formed in the dielectric layer (14). The microtip cavity (18) extends through the opening in the gate layer (16) to the resistive layer (12). A conductive layer is formed on the gate layer (16) and the resistive layer (12) within the microtip cavity (18) to form a conductive opening layer (20) on the gate layer (16) and a microtip cavity layer (22) on the resistive layer (12). A nonrefractory metal layer is formed on the conductive opening layer (20) and the microtip cavity layer (22) to form a nonrefractory layer (26) on the conductive opening layer (20) and to form a microtip metal nonrefractory base layer (24) on the microtip cavity layer (22) such that the microtip metal nonrefractory base layer (24) serves as the base layer for a microtip (28) within the microtip cavity (18). A microtip metal refractory tip layer (30) is formed on the microtip metal nonrefractory base layer (24) to serve as the tip of the microti…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.