Post treatment method for in-situ cleaning
US5632821A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 22, 1996 |
| Grant date | May 27, 1997 |
| Priority date | — |
| Expiry date | Feb 22, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for performing a post treatment effectively in a short period of time after in-situ cleaning for removing residual material remaining in a reaction chamber after a chemical vapor deposition process. The method preferably comprises a post treatment gas containing an element in common with a thin film and reactive with a cleaning gas to form a volatile product being introduced into the reaction chamber by a gas introduction system at such a flow rate that the thin film deposition rate is reaction-limited. The method further comprises plasma forming system forming a plasma by applying electric power to the post treatment gas under the condition that the thin film deposition rate is reaction-limited. The residual cleaning gas reacts with the post treatment gas to form a volatile product which is expelled out by an exhaust system. The cleaning gas is thereby removed without being embedded in the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.