Type silicon material with enhanced surface mobility
US5633174A · kind A · utility
34Cited by
2References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 20, 1992 |
| Grant date | May 27, 1997 |
| Priority date | — |
| Expiry date | Nov 20, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.