Semiconductor device for varying the mobility of electrons by light irradiation
US5633512A · kind A · utility
16Cited by
5References
66Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1993 |
| Grant date | May 27, 1997 |
| Priority date | — |
| Expiry date | Aug 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2843
Abstract
A semiconductor device in which a current is controlled by light includes a semiconductor member having a source unit and a drain unit and a channel unit through which electrons may flow between the source unit and the drain unit. The channel unit has a quantum well layer having a plurality of quantum energy levels and barrier layers provided adjacent to the well layer. Upon light irradiation of the quantum well layer, electrons make transitions between the different quantum energy levels, and the current flowing between the source unit and the drain unit is controlled by varying the mobility of these transitioned electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.