Lattice-mismatched crystal structures and semiconductor device using the same
US5633516A · kind A · utility
46Cited by
5References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1995 |
| Grant date | May 27, 1997 |
| Priority date | — |
| Expiry date | Jul 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device has a lattice-mismatched crystal structure including a semiconductor film formed on a substrate with an intervening buffer layer. The buffer layer has a plurality of layers, including first sublayers, or regions, in which an element that controls the lattice constant is provided in increasing mole fraction, and second sublayers, or regions, in which the lattice constant is maintained. The first sublayers and second sublayers are provided in alternating fashion. The resulting device has an increased electron mobility as compared with the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.