Lateral field effect transistor
US5633525A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1995 |
| Grant date | May 27, 1997 |
| Priority date | — |
| Expiry date | Nov 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral field effect transistor includes a semiconductor substrate, a source region further with source region stripes formed on the semiconductor substrate, and a drain region with drain region stripes formed on the semiconductor substrate and spaced laterally from the source region stripes. In addition, the lateral field effect transistor includes a source electrode having a first source electrode layer connected to the source region via a source contact and a second source electrode layer straddling the source region stripes and the drain region stripes. The first source electrode layer and the second source electrode layer are separated by an inter-layer insulation film and connected via a source connection hole formed through the inter-layer insulation film. In addition, the lateral field effect transistor includes a drain electrode having a first drain electrode layer connected to the drain region via a drain contact and a second drain electrode layer straddling the source region stripes and the drain region stripes. The first drain electrode layer and the second drain electrode layer are separated by an inter-layer insulation film and connected via a drain connection hole …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.