Photodiode array and method for manufacturing the same
US5633526A · kind A · utility
8Cited by
9References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1995 |
| Grant date | May 27, 1997 |
| Priority date | — |
| Expiry date | Apr 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/107
Abstract
A photodiode array includes an insulating film; a semiconductor layer of a first conductivity type provided on the insulating film; a positive electrode and negative electrode formed on the semiconductor layer; and a plurality of pn junctions formed in series in the semiconductor layer between the positive and negative electrodes. The pn junctions are formed by a diffusion layer of a second conductivity type formed in the semiconductor layer and another diffusion layer of the first conductivity type formed in the diffusion layer, so as to terminate on the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.