Apparatus for plasma-assisted high rate electron beam vaporization

US5635087A · kind A · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Siegfried Schiller · Dresden, DE
• Manfred Neumann · Marl, DE
• Henry Morgner · Dresden, DE

Key dates

• Filing date: Jun 12, 1995
• Grant date: Jun 3, 1997
• Expiry date: Jun 12, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/3137
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

It is known that improved coating properties can be obtained by plasma action in vacuum deposition, especially by vaporization. Substantially higher coating rates can be attained in vapor deposition, but, with high plasma densities, they result in excessive scattering of the electron beam and reduce the power density. According to the invention, a plasma source, preferably a hollow cathode are source, is arranged in the immediate vicinity of the substrate. Between the evaporator and the substrate there is a device for generating a magnetic field so that the region of high plasma density is separated from the evaporator and the electron beam by the magnetic field. The boundary field lines of this magnetic field run along an arc curving with respect to the substrate.