HGCDTE S-I-S two color infrared detector
US5635407A · kind A · utility
2Cited by
9References
16Claims
0Family size
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Inventor
Key dates
| Filing date | Sep 20, 1994 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Sep 20, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2823
Abstract
A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.