Semiconductor device comprising a salicide structure
US5635746A · kind A · utility
24Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1995 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Dec 20, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After formation a gate electrode and source/drain regions, N ions or O ions are implanted into a predetermined region using a resist mask, and a Ti layer is deposited on the entire face of a substrate, and then the Ti layer is silicided in self-alignment by a heat treatment, whereby a high resistivity TixNySiz mixing layer is formed the predetermined region on the gate electrode and the source/drain regions 10, and a low resistivity TiSi.sub.2 layer 12 is formed on another region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.