Patent · US Expired

Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique

US5637235A · kind A · utility

41Cited by
10References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 17, 1996
Grant dateJun 10, 1997
Priority date
Expiry dateJun 17, 2016

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11B2005/3996
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer and an active, top ferromagnetic layer separated by a thin nonmagnetic metal spacer layer. The active ferromagnetic layer and underlying spacer layer are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions overlying the active ferromagnetic layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.