Preparation method for lead-titanium based thin film
US5637352A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1995 |
| Grant date | Jun 10, 1997 |
| Priority date | — |
| Expiry date | Oct 5, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/409
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
An organometallic lead precursor, represented by following formula: EQU L.sub.x.Pb(THD).sub.2 [I] wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R=H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.5 to 2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Pb at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point. Lead-titanium based thin films prepared from the precursor, display superior reproducibility and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.