Patent · US Expired

Method of fabricating an air-filled waveguide on a semiconductor body

US5637521A · kind A · utility

232Cited by
5References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 14, 1996
Grant dateJun 10, 1997
Priority date
Expiry dateJun 14, 2016

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01P11/002
  • WIPO fieldTelecommunications
  • WIPO sectorElectrical engineering

Abstract

A method of using layers of gold metallization and a thick film coating of photo-sensitive material to form an air-filled microwave waveguide structure on the outer surface of a semiconductor body, such as a monolithic microwave integrated circuit commonly referred to as an MMIC, so that the waveguide can be coupled to the active and passive devices of the MMIC. First, a patterned metallization layer is formed on a substrate. A mold of a waveguide is fabricated by masking and then etching another metallization layer. The mold is turned over face down on the patterned metallization layer and bonded to the patterned metallization layer, Then, any unnecessary material is etched away.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.