MOSFET having improved driving performance
US5640035A · kind A · utility
11Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1995 |
| Grant date | Jun 17, 1997 |
| Priority date | — |
| Expiry date | Nov 9, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/608
Abstract
A gate oxide film is formed on the surface of a P-type silicon substrate. A gate electrode is formed on the gate oxide film. Phosphorus is ion-implanted into the P-type silicon substrate, using the gate electrode as a mask. Thus, N.sup.- -type layers of LDD regions are formed in the P-type silicon substrate. Sidewall regions of material having a high dielectric constant are formed on both sides of the gate electrode. The P-type silicon substrate is etched downward adjacent to both the sidewall regions. N.sup.+ -type layers of source and drain regions are formed in the etched surface of the P-type silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.