High voltage cut-off semiconductor device
US5640036A · kind A · utility
7Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1995 |
| Grant date | Jun 17, 1997 |
| Priority date | — |
| Expiry date | Sep 12, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a high voltage cut-off semiconductor device that can prevent unstable supply voltage of several volts that is not cut off by a conventional electrostatic discharge protection circuit from being applied to an internal circuit and apply only stable supply voltage to the internal circuit, thereby enhancing the characteristics of the semiconductor device and shortening the channel length of the transistors forming the internal circuit by suing a constant voltage circuit having a zener diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.