Thin film ferroelectric varactor
US5640042A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1995 |
| Grant date | Jun 17, 1997 |
| Priority date | — |
| Expiry date | Dec 14, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/2039
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A voltage-variable ceramic capacitance device which has a plurality of las in a matching lattice structure and which possesses a symmetric voltage characteristic and a determinable voltage breakdown and has a high resistance to overbiasing or reverse biasing from an applied voltage. The device consists of a carrier substrate layer, a high temperature superconducting metallic layer deposited on the substrate, a thin film ferroelectric deposited on the metallic layer, and a plurality of metallic conductive means disposed on the thin film ferroelectric which are placed in electrical contact with RF transmission lines in tuning devices. The voltage breakdown of the device is easily designed by selecting the appropriate thickness of the ceramic, thus enabling a highly capacitive device that can be placed in a position of maximum standing wave voltage in a tuning circuit or tuning mechanism to provide a maximum effect on tunability, especially in high power applications, based on the changes in dielectric constant of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.