Quasi four-level Tm:LuAG laser
US5640408A · kind A · utility
9Cited by
1References
8Claims
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Assignee
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Key dates
| Filing date | Jan 29, 1996 |
| Grant date | Jun 17, 1997 |
| Priority date | — |
| Expiry date | Jan 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/164
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A quasi four-level solid-state laser is provided. A laser crystal is disposed in a laser cavity. The laser crystal has a LuAG-based host material doped to a final concentration between about 2% and about 7% thulium (Tm) ions. For the more heavily doped final concentrations, the LuAG-based host material is a LuAG seed crystal doped with a small concentration of Tm ions. Laser diode arrays are disposed transversely to the laser crystal for energizing the Tm ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.