Preferentially etched epitaxial liftoff of InP material
US5641381A · kind A · utility
49Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1995 |
| Grant date | Jun 24, 1997 |
| Priority date | — |
| Expiry date | Mar 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.