Preparation method for lead-zirconium-titanium based thin film
US5641540A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1995 |
| Grant date | Jun 24, 1997 |
| Priority date | — |
| Expiry date | Apr 3, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/409
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An organometallic zirconium precursor, represented by following formula: EQU L.sub.x.Zr(THD).sub.4 [I] wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R.dbd.H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 with the proviso that L is NR.sub.3 or in the range of 0.5 to 2 with the proviso that L is Cl.sub.2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point. Lead-zirconium-titanium thin films prepared from the precursor, display superior reproducibility and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.