Method for formation of a self-aligned N-well for isolated field emission devices
US5641706A · kind A · utility
16Cited by
15References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1996 |
| Grant date | Jun 24, 1997 |
| Priority date | — |
| Expiry date | Jan 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for use in manufacture of field emitter devices is provided specifically for forming electron emitter tips in a doped semiconductor substrate. The method comprises the following steps: forming a depression around an emitter area in the substrate; doping the substrate in the depression; and expanding the dopant in the depression into the emitter area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.