Method and apparatus for accurate measurement of pull strength of bump electrodes on semiconductor devices
US5641913A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 18, 1995 |
| Grant date | Jun 24, 1997 |
| Priority date | — |
| Expiry date | Apr 18, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2203/0296
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A tensile strength or pull strength testing of a semiconductor bump electrode is measured without mounting a semiconductor chip on a substrate or the like. A probe to be inserted into a semiconductor bump electrode is heated up to a temperature at which a metal of the bump electrode 21 is fused, and then the probe having been heated up to the temperature to fuse the metal of the bump electrode is inserted into the bump electrode so that the metal of the bump electrode is fused. Further, the fused metal of the bump electrode is cooled down together with the probe to solidify the same. Thereafter, the probe fixed within the bump electrode is pulled vertically relative to the bump electrode until the bump electrode breaks. At the time of breakage of the semiconductor bump electrode, the pull force is detected as the pull strength of the bump electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.