Aluminum gallium nitride based heterojunction bipolar transistor
US5641975A · kind A · utility
17Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1995 |
| Grant date | Jun 24, 1997 |
| Priority date | — |
| Expiry date | Nov 9, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.