Voltage booster circuit for a memory device
US5642313A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 15, 1995 |
| Grant date | Jun 24, 1997 |
| Priority date | — |
| Expiry date | Nov 15, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A voltage boost circuit is provided which supplies a gate voltage to an insulated gate transistor. The voltage boost circuit has a voltage supply circuit, a supply line for connection to the gate of the insulated gate transistor and connected to the voltage supply circuit for precharge, a boost precharge circuit connected to the supply line and a capacitive element for boosting the voltage on the supply line. The circuit also has a facility for resetting the voltage on the supply line to its initial value after operation of the boost circuit. A memory array including such a voltage boost circuit is also provided, together with a method of boosting a gate voltage for insulating gate transistors in a memory array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.