Fluorine doped plasma enhanced phospho-silicate glass, and process
US5643640A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1995 |
| Grant date | Jul 1, 1997 |
| Priority date | — |
| Expiry date | Nov 27, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/401
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A fluorinated phosphosilicate glass (FPSG) is produced in a plasma-enhanced chemical vapor deposition process (PECVD) in which the plasma source comprises conventional phosphosilicate glass-forming materials together with one or more fluorine gas-forming materials. The deposited fluorine-gas enhances the filling of gaps or voids with dielectric glass compositions by etching the top of the via holes or gaps during the filling operation. The present fluorine-doped phosphosilicate glass compositions are stable compared to conventional phosphosilicate glass compositions which are relatively unstable and unsatisfactory for use as gap-filling dielectric glass compositions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.