Laser processing method and alignment
US5643801A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 1995 |
| Grant date | Jul 1, 1997 |
| Priority date | — |
| Expiry date | Aug 4, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser processing process which includes laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more and preferably, 100 nsec or more. The invention further relates to a laser processing apparatus which includes a laser generation device and a stage for mounting thereon a sample provide separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.