Photodetector with a multilayer filter and method of producing the same
US5644124A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 1996 |
| Grant date | Jul 1, 1997 |
| Priority date | — |
| Expiry date | May 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48465
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a photodetector with a multilayer filter. A light-receiving substrate is mounted on a recessed portion of a ceramic stem. An electrode pad is formed on a P-type layer of the light-receiving substrate while another electrode pad is formed on an N-type layer of the light-receiving substrate. An optical multilayer filter is formed on the light-receiving substrate except the regions of the electrode pads. Further, an epoxy transparent resin is poured into the recessed portion of the stem and then cured, so that a resin portion to cover the light-receiving substrate is formed. The optical multilayer filter is formed of amorphous low refractive index films made of SiC.sub.2 and amorphous high refractive index films made of TiO.sub.2. The amorphous high and low refractive index films are alternately stacked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.