Anode-side short structure for asymmetric thyristors

US5644149A · kind A · utility

Assignee

• Asea Brown Boveri, S.A. · CH

Inventor

• Peter Streit · Widen, CH

Key dates

• Filing date: Mar 17, 1995
• Grant date: Jul 1, 1997
• Expiry date: Mar 17, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

A thyristor according to the invention comprises a layer sequence containing an n-type emitter layer (4), a p-type base layer (5), an n-type base layer (6) and a p-type emitter layer (7) in a semiconductor substrate (3) between an anode (1) and a cathode (2). The p-type emitter layer (7) is perforated by anode short-circuit zones (8) and is thereby subdivided into sections. In this arrangement, the anode short circuits (8) short-circuit the n-type base layer (6) to the anode (1). Disposed between the anode short circuits (8) and the p-type emitter layer (7) is a p-type barrier layer (9), also referred to as p-type soft layer. According to the invention, said p-type barrier layer (9) has gaps (12) in which the n-type base (6) is contacted by the anode (1) either directly or via an anode short circuit (8).