Porous silicon photo-device capable of photoelectric conversion
US5644156A · kind A · utility
52Cited by
6References
9Claims
0Family size
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Key dates
| Filing date | Apr 12, 1995 |
| Grant date | Jul 1, 1997 |
| Priority date | — |
| Expiry date | Apr 12, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A semiconductor device includes a porous silicon layer with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, in which a plurality of pores are formed, and a thermal oxide film 0.01 to 10 .mu.m thick formed on the expanded surfaces of the porous silicon layer, wherein said expanded surfaces include internal surface of said pores.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.